View BFQ5913_976094.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BFQ591 NPN 7 GHz wideband transistor
Product specification Supersedes data of 2002 Jan 07 2002 Feb 04
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
FEATURES * High power gain * Low noise figure * High transition frequency * Gold metallization ensures excellent reliability. APPLICATIONS Intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscribers equipment. DESCRIPTION NPN wideband transistor in a SOT89 plastic package. MARKING TYPE NUMBER BFQ591 QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Cre fT GUM |s21|2 Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain feedback capacitance transition frequency maximum unilateral power gain insertion power gain Ts 90 C; note 1 IC = 70 mA; VCE = 8 V IC = 0; VCB = 12 V; f = 1 MHz IC = 70 mA; VCE = 12 V; f = 1 GHz IC = 70 mA; VCE = 12 V; f = 900 MHz; Tamb = 25 C IC = 70 mA; VCE = 12 V; f = 900 MHz; Tamb = 25 C CONDITIONS open emitter open base MIN. - - - - 60 - - - - TYP. - - - - 90 0.8 7 11 10 MARKING CODE BCp
1 Bottom view 2 3
MBK514
BFQ591
PINNING PIN 1 2 3 emitter collector base DESCRIPTION
handbook, halfpage
Fig.1 Simplified outline (SOT89).
MAX. 20 15 200 2.25 250 - - - -
UNIT V V mA W pF GHz dB dB
2002 Feb 04
2
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector pin. PARAMETER thermal resistance from junction to soldering point CONDITIONS Ts 90 C; note 1 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature Ts 90 C; note 1 CONDITIONS open emitter open base open collector - - - - - -65 - MIN.
BFQ591
MAX. 20 15 3 200 2.25 +150 175 V V V
UNIT
mA W C C
VALUE 38
UNIT K/W
2002 Feb 04
3
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL V(BR)CBO V(BR)CES V(BR)EBO ICBO hFE Cre fT GUM PARAMETER collector-emitter breakdown voltage emitter-base breakdown voltage collector-base leakage current DC current gain feedback capacitance transition frequency maximum unilateral power gain; note 1 CONDITIONS IC = 0.1 mA; IB = 0 IE = 0.1 mA; IC = 0 IE = 0; VCB = 10 IC = 70 mA ; VCE = 8 V IC = 0; VCB = 12 V; f = 1 MHz IC = 70 mA; VCE = 12 V; f = 1 GHz IC = 70 mA; VCE = 12 V; Tamb = 25 C f = 900 MHz f = 2 GHz |s21|2 Vo Notes insertion power gain output voltage IC = 70 mA; VCE = 12 V; f = 1 GHz; Tamb = 25 C note 2 - - - - 11 5.5 10 700 MIN. - - - - 60 - - TYP. - - - - 90 0.8 7
BFQ591
MAX. 20 15 3 100 250 - -
UNIT V V V nA pF GHz
collector-base breakdown voltage IC = 0.1 mA; IE = 0
- - - -
dB dB dB mV
s 21 1. GUM is the maximum unilateral power gain, assuming s12 is zero and G UM = 10 log ------------------------------------------------------- dB . 2 2 ( 1 - s 11 ) ( 1 - s 22 ) 2. dim = 60 dB (DIN45004B); Vp = Vo; Vq = Vo -6 dB; fp = 795.25 MHz; fq = 803.25 MHz; fr = 803.25 MHz; measured at f(p+q+r) = 793.25 MHz.
2
2002 Feb 04
4
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
handbook, halfpage
3
MLD796
handbook, halfpage
250
MRA749
Ptot (W) 2
hFE 200
150
100 1 50
0 0 50 100 150 Ts (C) 200
0 10-2
10-1
1
10
IC (mA)
102
VCE = 12 V.
Fig.3 Fig.2 Power derating curve.
DC current gain as a function of collector current; typical values.
handbook, halfpage
1.2
MLD797
handbook, halfpage
8
MLD798
Cre (pF)
fT (GHz) 6
0.8
4
0.4 2
0 0 4 8 12 VCB (V) 16
0 1 10 IC (mA)
102
IC = 0; f = 1 MHz.
VCE = 12 V; f = 1 GHz.
Fig.4
Feedback capacitance as a function of collector-base voltage; typical values.
Fig.5
Transition frequency as a function of collector current.
2002 Feb 04
5
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
handbook, halfpage
25
MLD799
handbook, halfpage
gain (dB) 20
10 gain
MLD800
(dB) 8 MSG
15 Gmax GUM
6 GUM
10
4
5
2
0 0 40 80 IC (mA) 120
0 0 40 80 IC (mA) 120
VCE = 12 V; f = 900 MHz.
VCE = 12 V; f = 2 GHz.
Fig.6
Gain as a function of collector current; typical values.
Fig.7
Gain as a function of collector current; typical values.
handbook, halfpage
40
MLD801
gain (dB) 30
MSG 20 GUM Gmax 10 MSG
0 10
102
103
f (MHz)
104
IC = 70 mA; VCE = 12 V.
Fig.8
Gain as a function of frequency; typical values.
2002 Feb 04
6
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
BFQ591
handbook, halfpage
-30
MLD802
handbook, halfpage
dim (dB) -40
-30 d2
MLD803
(dB) -40
-50 -50 -60 -60
-70
-70
-80 0 40 80 IC (mA) 120
0
40
80
IC (mA)
120
Vo = 700 mV; VCE = 12 V; Tamb = 25 C; f(p+q+r) = 793.25 MHz.
Vo = 316 mV; VCE = 12 V; f(p+q) = 810 MHz.
Fig.9
Intermodulation distortion as function of collector current; typical values.
Fig.10 Second order intermodulation distortion as function of collector current; typical values.
2002 Feb 04
7
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
SPICE parameters for the BFQ591 die. SEQUENCE No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19(1) 20(1) 21(1) 22 23 24 25 26 27 28 29 30 31 32 33 34 35(1) 36(1) 37(1) 38 Note 1. These parameters have not been extracted, the default values are shown. PARAMETER IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RB IRB RBM RE RC XTB EG XTI CJE VJE MJE TF XTF VTF ITF PTF CJC VJC MJC XCJ TR CJS VJS MJS FC VALUE 1.341 123.5 .988 75.85 9.656 232.2 2.134 10.22 1.016 1.992 294.1 211.0 997.2 5.00 1.000 5.00 1.275 920.6 0.000 1.110 3.000 3.821 600.0 348.5 13.60 71.73 10.28 1.929 0.000 1.409 219.4 166.5 2.340 543.7 0.000 750.0 0.000 733.2 UNIT fA - - V mA fA - - - V mA aA - A - eV - pF mV - ps - V mA deg fF mV - - ps F mV - -
BFQ591
handbook, halfpage
C cb
L1 B
LB B' E' LE C'
L2 C
C be
Cce
MBC964
L3
E
QLB = 50;QLE = 50;QLB,E(f) = QLB,E(f/fc); fc = scaling frequency = 1 GHz.
Fig.11 Package equivalent circuit SOT89.
List of components (see Fig.11) DESIGNATION Cbe Ccb Cce L1 L2 L3 LB LE 16 150 150 1 0.01 1 1.2 1.2 VALUE fF fF fF nH nH nH nH nH UNIT
2002 Feb 04
8
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads
BFQ591
SOT89
D
B
A
b3
E HE
L
1
2
b2
3
c
wM
b1 e1 e
0
2 scale
4 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.6 1.4 b1 0.48 0.35 b2 0.53 0.40 b3 1.8 1.4 c 0.44 0.37 D 4.6 4.4 E 2.6 2.4 e 3.0 e1 1.5 HE 4.25 3.75 L min. 0.8 w 0.13
OUTLINE VERSION SOT89
REFERENCES IEC JEDEC TO-243 EIAJ SC-62
EUROPEAN PROJECTION
ISSUE DATE 97-02-28 99-09-13
2002 Feb 04
9
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
DATA SHEET STATUS DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2) Development DEFINITIONS
BFQ591
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Preliminary data
Qualification
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2002 Feb 04
10
Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
NOTES
BFQ591
2002 Feb 04
11
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2002
SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613516/03/pp12
Date of release: 2002
Feb 04
Document order number:
9397 750 09271

▲Up To Search▲

Price & Availability of BFQ5913

	To Download BFQ5913 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .